胡光喜 -亚博vip888

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胡光喜

微纳系统中心

职称：副研究员

职务：信息学院工会主席

电子邮件：gxhu@fudan.edu.cn

办公地点：科学楼416办公室

电话：

课题组yabo亚博88主页：

半导体器件的建模与仿真
小尺寸半导体器件物理
量子统计物理

1，guangxi hu*, ping xiang, zhihao ding, ran liu, lingli wang, and ting-ao tang, “analytical models for electric potential, threshold voltage, and subthreshold swing of junctionless surrounding-gate transistors,” ieee transactions on electron devices, vol. 61, no. 3, 688-695 (2014).

2，guangxi hu*, shuyan hu, ran liu, lingli wang, xing zhou, and ting-ao tang, “quasi-ballistic transport model for graphene field-effect transistor”, ieee transactions on electron devices, vol. 60, no. 7, 2410-2414 (2013).

3，guangxi hu*, jinglun gu, shuyan hu, ying ding, ran liu, and ting-ao tang, “a unified carrier transport model for the nanoscale surrounding-gate mosfet comprising quantum mechanical effects” ieee trans. electron devices, vol. 58, no. 7, 1830-1836 (2011).

4，guangxi hu^*, haisheng qian, shuyan hu, ran liu, lirong zheng , and xing zhou, “analytical models for gan-based heterostructure-free normally-off finfet,” japanese journal of applied physics, vol. 56, 021002 (2017).

5，shuyan hu, guangxi hu*, lingli wang, ran liu, and lirong zheng, “quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors,” japanese journal of applied physics, vol. 55, 04ek01 (2016).

6，guangxi hu*, shuyan hu, jianhua feng, ran liu, lingli wang, and lirong zheng, “analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate finfets,” microelectronics journal, vol. 50, 60-65 (2016).

7，ping xiang, enyao gu, guangxi hu*, ran liu, lingli wang, and xing zhou, “analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate finfets,” far east journal of electronics and communications, vol. 12, no. 1, 39-48 (2014).

8，zhihao ding, guangxi hu*, ran liu, lingli wang, shuyan hu, and xing zhou, “analytical models for electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors”, journal of the korean physical society, vol. 62, no. 8, 1188-1193 (2013).

9，guanghui mei, peicheng li, guangxi hu^*, ran liu, lingli wang, and tingao tang, “quantum mechanical effects on the threshold voltage of surrounding-gate mosfets”, microelectronics journal, vol. 43, no. 11, 894-897 (2012).

10，peicheng li, guanghui mei, guangxi hu*, lingli wang, ran liu, and tingao tang, “effects of unintended dopants on i-v characteristics of the double-gate mosfets, a simulation study”, communications in theoretical physics, vol. 58, no. 1, 171-174 (2012).

11，peicheng li, guangxi hu^*, ran liu, and tingao tang, “electric potential and threshold voltage models for double-gate schottky-barrier source/drain mosfets”, microelectronics journal, vol. 42, no. 10, 1164-1168 (2011).

12，guanghui mei, guangxi hu^*, shuyan hu, jinglun gu, ran liu and tingao tang，“analytical model for subthreshold swing and threshold voltage of surrounding gate metal–oxide–semiconductor field-effect transistors”, japanese journal of applied physics, vol. 50, no. 7, 074202 (2011).

13，zhihao ding, guangxi hu^*, jinglun gu, ran liu, lingli wang and tingao tang，“an analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate mosfets”，microelectronics journal, vol. 42, no. 3, 515-519 (2011) (corresponding author)

14，guang-xi hu*, ling-li wang, ran liu, ting-ao tang, and zhi-jun qiu, “quantum-mechanical study on surrounding-gate metal-oxide- semiconductor field-effect transistors”, communications in theoretical physics, vol. 54, no. 4, 763-767 (2010).

15，guang-xi hu*, ran liu, zhi-jun qiu, ling-li wang, and ting-ao tang, “quantum mechanical effects on the threshold voltage of double-gate metal-oxide-semiconductor field-effect transistors”, japanese journal of applied physics, vol. 49, no. 3, 034001 (2010).

16，guang-xi hu*, ran liu, ting-ao tang, and ling-li wang, “analytic investigation on the threshold voltage of fully-depleted surrounding-gate metal-oxide-semiconductor field-effect transistors”, journal of the korean physical society, vol. 52, no. 6, 1909-1912 (2008).

17，guang-xi hu*，ran liu, ting-ao tang, shi-jin ding, and ling-li wang, “theory of short-channel surrounding-gate metal-oxide-semiconductor field-effect-transistors”, japanese journal of applied physics, vol. 46, no. 4a, 1437-1440 (2007).

18，guang-xi hu* and ting-ao tang, “some physical properties of a surrounding-gate mosfet with undoped body”, journal of the korean physical society, vol. 49, no. 2, 642-645 (2006).

19，guang-xi hu*, xian-xi dai, “functional integral approach to the transition temperature of attractive interacting bose gas in traps”，chinese physics letters, vol. 21, no. 7, 1201-1204 (2004).

20，guang-xi hu*, xian-xi dai, ji-xin dai, and william e. evenson, “functional integral approach to transition temperature of a homogeneous imperfect bose gas”， communications in theoretical physics, vol. 41, no. 6, 895-898 (2004).

21，guang-xi hu*, ji-ping ye, xian-xi dai, ji-xin dai, and william e. evenson, “critical properties and distributions of two-dimensional bose-einstein condensation”, international journal of modern physics b, vol. 18, no. 1, 103-114 (2004).

22，hu guang-xi, ye ji-ping, dai xian-xi*, dai ji-xin, and william e. evenson, “quantitative and qualitative analysis of bose-einstein condensation in harmonic traps”，communications in theoretical physics, vol. 39, no. 1, 49-53 (2003).

23，g.-x. hu, x.-x. dai*, j.-x. dai, and w. e. evenson, “transition temperatures of bose-einstein condensation in traps”. journal of low temperature physics, vol. 133, nos. 3/4, 239-249 (2003).

24，ji-ping ye, guang-xi hu, su-qiao an, xian-xi dai*, ji-xin dai, and william e. evenson, “the spatial and momentum distribution of bose-einstein condensation in harmonic traps”，physica a, vol. 323, 357-369 (2003).

conference publications

1， haisheng qian, guangxi hu*, laigui hu, xing zhou, ran liu, and lirong zheng, “analytical models for channel potential and drain current in algan/gan hemt devices”, proceedings of the 11^th ieee international conference on asic, guiyang, p. r. china, 2017.10.26-10.28.

2， haisheng qian, guangxi hu*, ran liu, lirong zheng, and xing zhou, “a threshold voltage model for gan-based heterostructure-free normally-off finfet”, proceedings of international conference on solid-state and integrated circuit technology (icsict), pp. 1065-1067, hangzhou, p. r. china, 2016.10.25-10.28.

3， guangxi hu*, shuyan hu, jianhua feng, ran liu, lingli wang, and lirong zheng, “analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate finfets”, proceedings of the 10^th ieee international conference on asic, pp. 1151-1154, chengdu, p. r. china, 2015.11.3-11.6. (ei)

4， shuyan hu, guangxi hu*, lingli wang, ran liu and lirong zheng, “a quasi-ballistic transport model for top- and back-gated graphene nanoribbon field-effect transistors”, proceedings on international conference on solid state devices and materials (ssdm), pp. 336-337, sapporo, japan, 2015.9.27-9.30.

5， guangxi hu*, shuyan hu, peicheng li, ran liu, lingli wang, and xing zhou, “analytic models for subthreshold channel potential and threshold voltage of the schottky-barrier surrounding-gate mosfets”, proceedings of international conference on solid-state and integrated circuit technology (icsict), 1425-1427, guilin, p. r. china, 2014.10.28-11.1. (ei)

6， ping xiang, zhihao ding, guangxi hu*, hui chol ri, ran liu，lingli wang, and xing zhou, “analytic models for electric potential and subthreshold swing of the dual-material double-gate mosfet”, proceedings of the 9^th ieee international conference on asic, pp. 1008-1011, shenzhen, p. r. china, 2013.10.28-10.31. (ei)

7， ping xiang, guangxi hu*, guanghui mei, ran liu, lingli wang, and tingao tang, “effective radius models of nanoscale elliptical surrounding-gate mosfets”, proceedings of international conference on solid-state and integrated circuit technology (icsict), pp. 730-732, xi’an, p. r. china, 2012.10.29-11.1. (ei)

8， peicheng li, guanghui mei, guangxi hu^*, ran liu, and tingao tang, “effects of unintended dopants on i-v characteristics of the double-gate mosfets, a simulation study”, proceedings of the 9^th ieee international conference on asic, pp. 792-795, xiamen, p. r. china, 2011.10.25-10.28. (ei)

9， guanghui mei, peicheng li, guangxi h^u*, ran liu, and tingao tang, “quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate mosfets”, proceedings of the 9^th ieee international conference on asic, pp. 591-593, xiamen, p. r. china, 2011.10.25-10.28. (ei)

10， guanghui mei, guangxi h^u*, peicheng li, jinglun gu, ran liu and tingao tang, “a threshold voltage model for the surrounding-gate mosfets”, proceedings of international conference on solid-state and integrated circuit technology (icsict), pp. 1919-1921, shanghai, p. r. china, 2010.11.1-11.4. (ei)

”, proceedings of international conference on solid-state and integrated circuit technology (icsict), pp. 1922-1924, shanghai, p. r. china, 2010.11.1-11.4. (ei)

12， zhihao ding, guangxi hu^*, jinglun gu, ran liu, lingli wang, and tingao tang, “an analytical model for the subthreshold swing of double-gate mosfets”, proceedings of the 2010 international workshop on junction technology, pp. 228-231, shanghai, p. r. china, 2010.5.10-5.11. (ei)

13， guang-xi hu*, ran liu, ting-ao tang, ling-li wang, and zhi-jun qiu “quantum-mechanical study on the electron effective mobility of surrounding-gate nmosfets”, proceedings of the 8^th ieee international conference on asic, pp. 792-795, changsha, p. r. china, 2009.10.20-10.23. ( ei)

14， guang-xi hu*, pei-cheng li, guang-hui mei, hai-ying yang, ling-li wang, and ran liu, “some physical properties of short-channel surrounding-gate metal-oxide-semiconductor field-effect-transistors”, proceedings of the 6th international new exploratory technologies conference, pp. 143-148 shanghai, p. r. china, 2009.