万景 -亚博vip888

硅基芯片兼容的新型半导体器件（招收推免及卓博计划学生）
1. 1. 发明新型低亚阈摆幅开关和挥发性存储器 (z2-fet)
  2. 发明原位光电子图像传感器（pisd）
  3. 系统研究隧穿场效应晶体管(tunneling fet, tfet)
基于新材料的半导体器件（招收推免及卓博计划学生）

si/mos2界面耦合光电探测器
单晶体管波长敏感探测器
第三代半导体器件

人工智能与芯片应用系统设计（与企业联合培养）
1. 1. 人工智能应用于集成电路设计
  2. 智能半导体参数测试仪

小组长期招聘博士后（半导体器件工艺方向）

ieee senior member
多个ieee国际会议分会主席和技术委员，如ieee s3s，ieee icsict，ieee iwjt，ieee icta 和ieee icicdt等
多个国际会议邀请报告，如ieee icsict，ieee iwjt，ieee icta 和ieee icicdt等
ieee edl，ieee ted，ieee tdmr, applied physics letters, solid-state electronics, microelectronics journal和journal of applied physics等杂志审稿人

2019-2021----指导研究生连续三年获ieee cstic 国际会议优秀学生论文奖
2021----pssa 杂志60周年封面文章
2021---指导研究生获国家奖学金2人次
2020---国家级一流本科课程（半导体器件与物理）
2019---指导研究生获国家奖学金
2019---指导研究生获复旦-kla 企业奖学金（全校12人之一）
2019---半导体器件顶级期刊 ieee edl 封面文章
2019----上海市青年科技启明星
2016----海外高层次引进人才青年项目
2014----ieee edl金牌审稿人
2013----法国纳米科学基金委优秀博士论文奖
2012----提名ieee edl, george e. smith 奖
2012----vlsi-tsa最佳会议报告奖
2012----eurosoi最佳会议报告奖
2009----上海市优秀硕士论文
2009----复旦大学优秀硕士论文

2012.10 至 2016.08 globalfoundries公司，malta，美国，高级工程师
2009.07至2012.10 法国格勒诺布尔大学纳米电子与纳米技术博士（cnrs，cea-leti）
2006.09至2009.07 复旦大学微电子与固体电子学硕士
2001.09 至2005.07 南昌大学电子信息工程学士

半导体器件物理，研究生必修课；
现代cmos器件，研究生选修课；
电子系统导论，本科生必修课；

发表文章

杂志（sci收录，*为通信作者）

[1]ling tong, jing wan*, kai xiao, jian liu, jingyi ma, xiaojiao guo, lihui zhou, xinyu chen, yin xia, sheng dai, zihan xu, wenzhong bao* & peng zhou*, heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide, nature electronics, 6, 37–44 (2023). https://doi.org/10.1038/s41928-022-00881-0

[2]haihua wang, jian liu, jiahao wei, kai xiao, yingxin chen, yu-long jiang* and jing wan*, au nanoparticles/hfo2/fully depleted silicon-on-insulator mosfet enabled rapid detection of zeptomole covid-19 gene with electrostatic enrichment process, ieee transactions on electron devices, early access (2023)，10.1109/ted.2022.3233544

[3]yingxin chen, kai xiao, yajie qin*, fanyu liu* and jing wan*, a compact artificial spiking neuron using a sharp-switching fet with ultra-low energy consumption down to 0.45 fj/spike, ieee electron device letters, 44, 160-163 (2023)，10.1109/led.2022.3219465

[4]j. liu, xue-jiao wang, yu-long jiang* and jing wan*, floating source/drain enabled linear–linear–logarithmic self-adaptive one-transistor active pixel sensor, ieee transactions on electron devices. 69, 4976-4980 (2022)

[5]xue-jiao wang, zhao-yang li, zhao-zhang yan, lei-gang chen, zhong-hua li, yu-long jiang* and jing wan*, dddmosfet performance improvement by gate oxide removal followed by silicided source/drain formation in gate slots, ieee transactions on electron devices. 69, 5368-5372 (2022)

[6]jiahao wei, haihua wang, tian zhao, yu-long jiang* and jing wan*, a new compact mosfet model based on artificial neural network with unique data preprocessing and sampling techniques, ieee transactions on computer-aided design of integrated circuits and systems (ieee tcad), 10.1109/tcad.2022.3193330

[7]sherzod khaydarov, kai xiao, yajie qin*, fanyu liu* and jing wan*，high gain pseudo - inverter based on silicon-on-insulator with ambipolar transport , ieee transactions on electron devices. 69, 4075–4080 (2022)，10.1109/ted.2022.3178676

[8]haihua wang, yu-long jiang*, jing wan*, significant performance improvement of microrna-375 detection by modulation of au nanoparticle distribution using soi mosfet, ieee electron device letters, 43, 128-130 (2022), 10.1109/led.2021.3129347

[9]zhao-yang li, xue-jiao wang, han-lun cai, zhao-zhang yan, yu-long jiang*, jing wan*, “difference between atomic layer deposition tial and physical vapor deposition tial in threshold voltage tuning for metal gated nmosfets”, ieee electron device letters, 42, 1830-1833, (2021), 10.1109/led.2021.3124801

[10]xinyu chen , yufeng xie , yaochen sheng , hongwei tang , zeming wang , yu wang , yin wang , fuyou liao , jingyi ma , xiaojiao guo , ling tong , hanqi liu , hao liu , tianxiang wu , jiaxin cao , sitong bu , hui shen , fuyu bai , daming huang , jianan deng , antoine riaud , zihan xu , chenjian wu , shiwei xing , ye lu , shunli ma , zhengzong sun , zhong-ying xue , professor zengfeng di , xiao gong , david wei zhang , peng zhou*, jing wan*, wenzhong bao*, wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning, nature communication, 12, 5953 (2021) 10.1038/s41467-021-26230-x

[11]jing chen, junqiang zhu, ping li, xiao-ming wu, ran liu, jing wan*, tian-ling ren*, fabricating in-plane mote p-n homojunction photodetector using laser-induced p-type doping, ieee transactions on electron devices. 68, 9, 4485-4490 (2021)， 10.1109/ted.2021.3099082

[12]jing chen, ping li, ran liu, xiao-ming wu, jing wan*, tian-ling ren, reconfigurable mote2 field-effect-transistors and its application in compact cmos circuits, ieee transactions on electron devices. 68, 9, 4748-4753 (2021)，10.1109/ted.2021.3096493

[13]j. liu, y. -f. cao, x. -j. wang, y. -l. jiang*, j. wan*, a novel one-transistor active pixel sensor with tunable sensitivity, ieee electron device letters, 42, 927, (2021) doi: 10.1109/led.2021.3073930.

[14]j. liu, s. cristoloveanu, j.wan* , a review on the recent progress of soi‐based photodetectors. phys. status solidi a. 218，200751, (2021) https://doi.org/10.1002/pssa.202000751；60周年创刊封面文章

[15]j. liu, k. xiao, j.-n. deng, a. zaslavsky, s. cristoloveanu, fy. liu*, j. wan*, optimization of photoelectron in-situ sensing device in fd-soi, ieee journal of the electron devices society. 187, 9, (2021)

[16]yaochen sheng, xinyu chen, fuyou liao, yin wang, jingyi ma, jianan deng, zhongxun guo, sitong bu, hui shen, fuyu bai, daming huang, jianlu wang, weida hu, lin chen, hao zhu, qingqing sun, peng zhou, david wei zhang, jing wan*, wenzhong bao* ,gate stack engineering in mos2 field-effect transistor for reduced channel doping and hysteresis effect, 7, 2000395, advanced electronic material, (2021), 10.1002/aelm.202000395

[17]m. arsalan, j. liu, a. zaslavsky, s. cristoloveanu, j.wan*, deep-depletion effect in soi substrates and its application in photodetectors with tunable responsivity and detection range, ieee transactions on electron devices. 3256, 67, (2020). 10.1109/ted.2020.2998453

[18]jing chen, junqiang zhu, qiyuan wang, jing wan*, ran liu, homogeneous 2d mote2 cmos inverters and p–n junctions formed by laser-irradiation-induced p-type doping, 2001428, 16, small, (2020). 10.1002/smll.202001428

[19]fuyou liao, jianan deng, xinyu chen, yin wang, xinzhi zhang, jian liu, hao zhu, lin chen, qingqing sun, weida hu, jianlu wang, jing zhou, peng zhou, david wei zhang, jing wan*, wenzhong bao*, a dual-gate mos₂ photodetector based on interface coupling effect, small, 16, 1904369, (2020)

[20]j. liu, k.-m. zhu, a. zaslavsky, s. cristoloveanu, and j. wan*, photodiode with low dark current built in silicon-on-insulator using electrostatic doping, solid state electron, 168, 107733 (2020) 10.1016/j.sse.2019.107733

[21]jianan deng, lingyi zong, mingsai zhu, fuyou liao, yuying xie, zhongxun guo, jian liu, bingrui lu, jianlu wang, weida hu, peng zhou, wenzhong bao* and jing wan*, mos2/hfo2/silicon-on-insulator dual-photogating transistor with ambipolar photoresponsivity for high-resolution light wavelength detection, advanced functional materials, 29, 1906242 (2019)

[22]yong-feng cao, m. arsalan, j. liu, yu-long jiang* and j. wan*, a novel one-transistor active pixel sensor with in-situ photoelectron sensing in 22 nm fd-soi technology. ieee electron device letters. 40, 738-741 (2019) 封面文章

[23]fuyou liao, yaocheng sheng, zhongxun guo, hongwei tang, yin wang, lingyi zong, xinyu chen, antoine riaud, jiahe zhu, yufeng xie, lin chen, hao zhu, qingqing sun, peng zhou, xiangwei jiang, jing wan*, wenzhong bao*, and david wei zhang, mos2 dual-gate transistors with electrostatically doped contacts, nano research, 12, 2515-2519, (2019)

[24]j. liu, xy. cao, br. lu, yf. chen, a. zaslavsky, s. cristoloveanu and j. wan*, dynamic coupling effect in z2-fet and its application for photodetection, ieee jeds, 7, 846-854, (2019)

[25]jn. deng, zx. guo, yw. zhang, xy. cao, sm. zhang, yc. sheng, h. xu, wz. bao* and j. wan*, mos2/silicon-on-insulator heterojunction field-effect-transistor for high-performance photodetection. ieee electron device letters. 40, 423-426 (2019)

[26]wu zan, qiaochu zhang, hu xu, fuyou liao, zhongxun guo, jianan deng, jing wan*, hao zhu, lin chen, qingqing sun, shijin ding, peng zhou, wenzhong bao* and david wei zhang, large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional mos2 devices, nano research, 11, 3739 (2018).

[27]x-y. cao, w-s. lin, h-b. liu, j-n. deng, m. arsalan, k-m. zhu, y-f. chen, j. wan*, “a soi photodetector with field-induced embedded diode showing high responsivity and tunable response spectrum by backgate”, ieee transactions on electron devices, 65, 5412-5418, (2018).

[28]jn. deng, jh. shao, br. lu, yf. chen, a. zaslavsky, s. cristoloveanu, m. bawedin and j. wan*, interface coupled photodetector (icpd) with high photoresponsivity based on silicon-on-insulator substrate (soi), ieee jeds, 6, 557-564（2018）.

会议文章 (ei收录，*为通信作者)

[1]jing jing chou, jian liu, jing wan*, novel photodetectors based on soi and two-dimensional materials, ieee iwjt, 2021. 邀请报告

[2]yingxin chen, jianan deng, qianqian huang, wenzhong bao*, and jing wan*，light-modulated subthreshold swing effect in a mos2-si hetero mosfet，ieee cstic 2021 最佳会议文章 ei: 20213510831268

[3]jiahao. wei, tian. zhao, zheng. zhang and jing wan*，modeling of cmos transistors from 0.18μm process by artificial neural network, ieee cstic 2021 20213510831419

[4]yx. chen, k. xiao, hh. wang, j. wan*, the impact of incident wavelength and incident intensity on light-modulated subthreshold swing effect, ieee asicon 2021

[5]jiaxing zuo, jing wan*, novel photodetectors and image sensors based on soi substrate, ieee asicon 2021，邀请报告

[6]wei mao, hua fang, zheng zhang, yi-fei huang, jing-xiao zhang, bi-jian lan, jing wan*，automatic design of analog integrated circuit based on multi-objective optimization，ieee icsict 2020 20210309772673

[7]k. xiao, j. liu, x. liu and j. wan*，gas sensing cmos transistors based on soi substrate, ieee icsict 2020 20210309772642

[8]k. xiao, j. liu, wei wu, zheng xu and j. wan*, design of a novel one transistor-dram based on bulk silicon substrate, in ieee cstic, 2020. 最佳会议文章 20210309773849

[9]k. xiao, j. liu, jn. deng, yl. jiang, wz. bao, a. zaslavsky, s. cristoloveanu, x. gong, and j. wan*, novel semiconductor devices based on soi substrate, in ieee cstic, 2020. 20210309773943

[10]jh. wei, w. mao, h. fang, z. zhang, jx. zhang, bj. lan and j. wan*, advanced mosfet model based on artificial neural network, in ieee cstic, 2020. 20210309773834

[11]j. liu, m. arsalan, a. zaslavsky, s. cristoloveanu and j. wan*, optimization of photoelectron in-situ sensing device in fd-soi, in ieee s3s, 2019, 1-4. 20210809937762

[12]km. zhu, jh. wei and j. wan*, negative capacitance gan hemt with improved subthreshold swing and transconductance. in ieee s3s, 2019, 1-4. 20210809937712

[13]j. wan*, wz. bao, j. deng, x. cao, h. liu, b. lu, y. chen, a.zaslavsky, s. cristoloveanu and m. bawedin. a review on z2-fet and pisd based on silicon-on-insulator substrate. in ieee icta. 2019, p. 1-4. 邀请报告

[14]j. wan*, wz. bao, jn. deng, j. liu, m. arsalan, zx. guo and xy. cao, et al., novel photodetectors and image sensors based on silicon-on-insulator substrate in ieee icicdt, 2019 邀请报告 20193507381987

[15]j. liu and j. wan*, z2-fet: application in image sensing and self-aligned structure for further scaling down, ieee iwjt, 2019 邀请报告 20193707433930

[16]j. wan*, wz. bao, j. deng, x. cao, h. liu, b. lu, y. chen, a.zaslavsky, s. cristoloveanu and m. bawedin. icpd: a soi-based photodetector with high responsivity and tunable response spectrum. in the 14th ieee icsict. 2018, p. 1-4. 邀请报告 20193007228335

[17]j. liu, xy. cao, br. lu, yf. chen, a. zaslavsky, s. cristoloveanu, m. bawedin and j. wan*, z2-fet: a multi-functional device used for photodetection, cstic, 2019 最佳会议文章 20193007228335

[18]j. wan*, j. deng, x. cao, h. liu, b. lu, y. chen, a.zaslavsky, s. cristoloveanu and m. bawedin. novel photodetector based on fd-soi substrate with interface coupling effect. in the 18th international workshop on junction technology (ieee iwjt 2018). 2018, p. 1-4. 邀请报告 ei索引号20190406415186

[19]xiao-ying cao, wen-song lin, jia-nan deng, hong-bin liu, kun-ming zhu, muhammad arsalan, jing wan*, a novel photodetector with the embedded field-induced p-n photodiode in the soi substrate, in the 14th ieee icsict. 2018, p. 1-4. ei索引号 20190406414541

[20]km. zhu, jn. deng, xy. cao, j. wan*, ar rie to improve the source/drain contact in gan hemt, in the 14th ieee icsict. 2018, p. 1-4. ei索引号20190406415157

[21]j. liu, xy. cao, br. lu, yf. chen, a. zaslavsky, s. cristoloveanu, m. bawedin and j. wan*, a new photodetector on soi, in ieee soi-3d-subthreshold microelectronics technology unified conference (s3s). 2018, p. 1-4. ei索引号20191206667769

[22]m. arsalan, xy. cao, br. lu,yf. chen, a. zaslavsky, s. cristoloveanu, m. bawedin and j. wan*, a highly sensitive photodetector based on deep-depletion effects in soi transistors, in ieee soi-3d-subthreshold microelectronics technology unified conference (s3s). 2018, p. 1-4. ei索引号 20191206667750

[23]j. deng, j. shao, b. lu, y. chen, a. zaslavsky, s. cristoloveanu, m. bawedin and j.wan*. a novel photodetector based on the interface coupling effect in silicon-on-insulator mosfets. in ieee soi-3d-subthreshold microelectronics technology unified conference (s3s). 2017, p. 1-4. ei索引号 20182205266610

专利

[1]万景，徐壮壮; 一种大动态范围和低频噪声测量系统；公开号：cn114578146

[2]刘坚，万景，蒋玉龙；基于全耗尽绝缘层上硅衬底融合视觉传感器像素结构及其制备与信号控制方法; 申请号： cn202211152590.0

[3]刘坚，万景，蒋玉龙；对称式融合视觉传感器像素结构及其制备与信号控制方法; 申请号： cn202211153498.6

[4]万景，周鹏，包文中，童领，肖凯，一种三维互补场效应晶体管及其制备方法, 发明公开号：cn114937636a.中国.发明专利. 已受理

[5]万景，王海华，徐壮壮，一种多针阵列式伪mos结构测量探头，中国专利，授权：cn113267714a

[6]万景，王海华，一种纳米金颗粒修饰的伪mos生化分子传感器及其制备方法，中国专利公开号：cn113311047a

[7]万景，基于半导体衬底的新型单晶体管像素传感器及制备方法，中国专利公开号：cn112420752a

[8]万景，宗钰，一种单晶体管多维度光信息探测器，中国专利公开号：cn111463310a

[9]万景，刘坚，基于绝缘层上硅衬底的可调性能光电传感器及其制备方法，中国专利公开号：cn112382639a

[10]万景，皮韶冲，刘坚，一种新型单晶体管主动像素传感器及其制备方法，中国专利公开号：cn111446268a

[11]万景，邓嘉男，基于双光电栅极结构的半导体波长探测器及其制备方法，中国专利，授权：cn112382692a

[12]万景，包文中，邓嘉男，宗凌逸，基于自对准结构的叠层沟道纳米片晶体管及其制备方法，中国专利，授权：cn112490289a

[13]万景，黄逸轩，陈颖欣，基于绝缘层上硅衬底的单结晶体管及其制备方法，中国专利，授权.cn111509040b （2020-04-28；20200807）

[14]万景，肖凯，陈颖欣，基于半导体衬底的凹槽型场效应正反馈晶体管及制备方法，中国专利，授权.cn111477685b（2020-04-26；2021-09-28）

[15]万景，肖凯，基于体硅的新型半导体场效应正反馈晶体管及制备方法，中国专利，授权.cn110634955b

[16]万景，基于绝缘层上硅的单晶体管主动像素传感器及制备方法，中国专利,授权.cn109728019b

[17]万景，邓嘉男，邵金海，陆冰睿，陈宜方,一种半导体光电传感器, 中国专利,授权.cn106711275b

[18]万景，邓嘉男，邵金海，陆冰睿，陈宜方,一种基于动态耦合效应的半导体光电传感器及其制备方法,中国专利,授权.cn106876421b

[19]万景，邓嘉男，邵金海，陆冰睿，陈宜方,一种半导体场效应正反馈器件,中国专利,授权.cn106876368b

书籍章节

[1] j wan, s. cristoloveanu, s. t. le, a. zaslavsky, c. le royer, s. a. dayeh, d. e. perea, s. t. picraux, “sharp-switching cmos-compatible devices with high current drive”, in: “future trends in microelectronics: frontiers and innovations”, (2013). wiley-interscience, , 62 (19) :67-8